An Ultrafast Valve for Atomic Layer Deposition Applications

TLX developed a two-position, three-way pilot valve tailored specifically for ALD applications.

Atomic Layer Deposition

Customer Problem

Atomic layer deposition (ALD) is a process that grows thin films one atomic layer at a time with precise thickness control and uniform conformality. The layers are grown by applying doses of reactive chemicals with a pulse of inert gas between each dose. The deposition process required a valve that could sustain an extremely high cycle rate under the required temperatures and pressures while maintaining consistent performance over a lifespan greater than 100 million cycles. 

The TLX Solution

TLX developed a compact, two-position, three-way pilot valve that used pulse-width-modulated control for ALD applications. The valve achieved the necessary cycle rate with a response time of less than 6 milliseconds while operating in temperatures up to 200°C and pressures up to 500 kPa. This component delivered consistent performance throughout its service life of greater than 100 million cycles. 

Atomic Layer Deposition Pilot Valve

Atomic Layer Deposition Pilot Valve

Operating voltage
12 to 30 Vdc
Operating pressure range
0 to 500 kPa
Operating temperature range
-40°C to 200°C (-40°F to 392°F)
Operating frequency
100 to 300 Hz
Resistance at 20°C
48 Ω ± 4.8 Ω
Inductance
68.6 mH
Flow rate
35 L/min
Leak rate
< 2 cc/min
PWM pressure control
10-90% duty cycle
PWM vacuum control
10-90% duty cycle
Response time
< 6 ms
Burst pressure
5000 kPa
Vibration
20 G

All TLX components are customized to fit system requirements, meaning technical specifications are unique to each customer and design. Examples given on our website are for illustration purposes only.

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