An Ultrafast Valve for Atomic Layer Deposition Applications
TLX developed a two-position, three-way pilot valve tailored specifically for ALD applications.
Customer Problem
Atomic layer deposition (ALD) is a process that grows thin films one atomic layer at a time with precise thickness control and uniform conformality. The layers are grown by applying doses of reactive chemicals with a pulse of inert gas between each dose. The deposition process required a valve that could sustain an extremely high cycle rate under the required temperatures and pressures while maintaining consistent performance over a lifespan greater than 100 million cycles.
The TLX Solution
TLX developed a compact, two-position, three-way pilot valve that used pulse-width-modulated control for ALD applications. The valve achieved the necessary cycle rate with a response time of less than 6 milliseconds while operating in temperatures up to 200°C and pressures up to 500 kPa. This component delivered consistent performance throughout its service life of greater than 100 million cycles.
- Operating voltage
- 12 to 30 Vdc
- Operating pressure range
- 0 to 500 kPa
- Operating temperature range
- -40°C to 200°C (-40°F to 392°F)
- Operating frequency
- 100 to 300 Hz
- Resistance at 20°C
- 48 Ω ± 4.8 Ω
- Inductance
- 68.6 mH
- Flow rate
- 35 L/min
- Leak rate
- < 2 cc/min
- PWM pressure control
- 10-90% duty cycle
- PWM vacuum control
- 10-90% duty cycle
- Response time
- < 6 ms
- Burst pressure
- 5000 kPa
- Vibration
- 20 G
All TLX components are customized to fit system requirements, meaning technical specifications are unique to each customer and design. Examples given on our website are for illustration purposes only.
Working with TLX
- Experienced partner of industry leaders, first-tier suppliers, and OEMs
- Direct access to our design and engineering team
- Localized production in USA and China
- Dependable single-source solution from design to delivery
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