An Ultrafast Valve for Atomic Layer Deposition Applications
Customer Problem
Atomic layer deposition (ALD) is a process that grows thin films one atomic layer at a time with precise thickness control and uniform conformality. The layers are grown by applying doses of reactive chemicals with a pulse of inert gas between each dose. The deposition process required a valve that could sustain an extremely high cycle rate under the required temperatures and pressures while maintaining consistent performance over a lifespan greater than 100 million cycles.
The TLX Solution
TLX developed a compact, two-position, three-way pilot valve that used pulse-width-modulated control for ALD applications. The valve achieved the necessary cycle rate with a response time of less than 6 milliseconds while operating in temperatures up to 200°C and pressures up to 500 kPa. This component delivered consistent performance throughout its service life of greater than 100 million cycles.
Atomic Layer Deposition Pilot Valve
- Operating voltage
- 12 to 30 Vdc
- Operating pressure range
- 0 to 500 kPa
- Operating temperature range
- -40°C to 200°C (-40°F to 392°F)
- Operating frequency
- 100 to 300 Hz
- Resistance at 20°C
- 48 Ω ± 4.8 Ω
- Inductance
- 68.6 mH
- Flow rate
- 35 L/min
- Leak rate
- < 2 cc/min
- PWM pressure control
- 10-90% duty cycle
- PWM vacuum control
- 10-90% duty cycle
- Response time
- < 6 ms
- Burst pressure
- 5000 kPa
- Vibration
- 20 G
All TLX components are customized to fit system requirements, meaning technical specifications are unique to each customer and design. Examples given on our website are for illustration purposes only.
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